dlvr.itGate-induced layer sliding drives non-volatile switching of magnetism in tetralayer grapheneNature Nanotechnology, Published online: 14 October 2026; doi:10.1038/s41565-026-02306-xGate-voltage sweeps drive a first-order sliding transition between Bernal-dominant and rhombohedral–Bernal mixed stacking in marginally twisted double-bilayer graphene, which allows for non-volatile on/off switching of the low-temperature ferromagnetic phase.
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